MPSA18RLRM
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- Mfr.Part #
- MPSA18RLRM
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.2A TO92
- Stock
- 16,463
- In Stock ：
- 16,463
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Through Hole
- Max Power Dissipation :
- 625mW
- Collector Emitter Saturation Voltage :
- 80mV
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 45V
- Base Part Number :
- MPSA18
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- RoHS Status :
- Non-RoHS Compliant
- HTS Code :
- 8541.21.00.75
- Published :
- 1998
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Current Rating :
- 200mA
- Transistor Application :
- AMPLIFIER
- Polarity/Channel Type :
- NPN
- Terminal Position :
- BOTTOM
- Qualification Status :
- Not Qualified
- Transistor Type :
- NPN
- Transition Frequency :
- 160MHz
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Reach Compliance Code :
- not_compliant
- Mounting Type :
- Through Hole
- Additional Feature :
- LOW NOISE
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Gain Bandwidth Product :
- 160MHz
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 240
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 10mA 5V
- hFE Min :
- 400
- JESD-30 Code :
- O-PBCY-T3
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- JESD-609 Code :
- e0
- Collector Emitter Voltage (VCEO) :
- 300mV
- Lead Free :
- Contains Lead
- Emitter Base Voltage (VEBO) :
- 6.5V
- Max Collector Current :
- 200mA
- Packaging :
- Tape and Box (TB)
- Voltage - Rated DC :
- 45V
- Collector Emitter Breakdown Voltage :
- 45V
- Datasheets
- MPSA18RLRM
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPSA18RLRM Overview
This device has a DC current gain of 500 @ 10mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 80mV.A VCE saturation (Max) of 300mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6.5V.This device has a current rating of 200mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 160MHz.A maximum collector current of 200mA volts is possible.
MPSA18RLRM Features
the DC current gain for this device is 500 @ 10mA 5V
a collector emitter saturation voltage of 80mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6.5V
the current rating of this device is 200mA
a transition frequency of 160MHz
MPSA18RLRM Applications
There are a lot of ON Semiconductor
MPSA18RLRM applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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