MPSA18G
- Mfr.Part #
- MPSA18G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.2A TO92
- Stock
- 6,042
- In Stock :
- 6,042
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mount :
- Through Hole
- HTS Code :
- 8541.21.00.75
- Qualification Status :
- Not Qualified
- Packaging :
- Bulk
- Operating Temperature :
- -55°C~150°C TJ
- Gain Bandwidth Product :
- 160MHz
- Terminal Position :
- BOTTOM
- Base Part Number :
- MPSA18
- Collector Emitter Saturation Voltage :
- 80mV
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Peak Reflow Temperature (Cel) :
- 260
- Voltage - Rated DC :
- 45V
- RoHS Status :
- RoHS Compliant
- Current Rating :
- 200mA
- Pin Count :
- 3
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Pbfree Code :
- yes
- Max Collector Current :
- 200mA
- Lifecycle Status :
- OBSOLETE (Last Updated: 2 days ago)
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 10mA 5V
- Transition Frequency :
- 160MHz
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Published :
- 2006
- Collector Emitter Voltage (VCEO) :
- 300mV
- hFE Min :
- 400
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 6.5V
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e1
- Transistor Element Material :
- SILICON
- Transistor Application :
- AMPLIFIER
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 45V
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 45V
- Max Power Dissipation :
- 625mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Additional Feature :
- LOW NOISE
- Number of Pins :
- 3
- Datasheets
- MPSA18G
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
MPSA18G Overview
This device has a DC current gain of 500 @ 10mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 80mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6.5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 200mA.In this part, there is a transition frequency of 160MHz.The maximum collector current is 200mA volts.
MPSA18G Features
the DC current gain for this device is 500 @ 10mA 5V
a collector emitter saturation voltage of 80mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6.5V
the current rating of this device is 200mA
a transition frequency of 160MHz
MPSA18G Applications
There are a lot of ON Semiconductor
MPSA18G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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