MPSA18_D26Z

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Mfr.Part #
MPSA18_D26Z
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
TRANS NPN 45V 0.1A TO92-3
Stock
47,985
In Stock :
47,985

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
hFE Min :
500
Packaging :
Tape and Reel (TR)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
Vce Saturation (Max) @ Ib, Ic :
300mV @ 5mA, 50mA
Number of Elements :
1
Collector Base Voltage (VCBO) :
45V
Collector Emitter Breakdown Voltage :
45V
Number of Pins :
3
Max Operating Temperature :
150°C
Collector Emitter Saturation Voltage :
300mV
Frequency - Transition :
100MHz
Transistor Type :
NPN
Power - Max :
625mW
Min Operating Temperature :
-55°C
Lead Free :
Lead Free
Polarity :
NPN
Base Part Number :
MPSA18
Mount :
Through Hole
Operating Temperature :
-55°C~150°C TJ
Max Power Dissipation :
625mW
Max Collector Current :
100mA
Power Dissipation :
625mW
Current - Collector (Ic) (Max) :
100mA
Collector Emitter Voltage (VCEO) :
45V
Mounting Type :
Through Hole
Supplier Device Package :
TO-92-3
Gain Bandwidth Product :
100MHz
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Emitter Base Voltage (VEBO) :
6.5V
Current - Collector Cutoff (Max) :
50nA ICBO
RoHS Status :
RoHS Compliant
DC Current Gain (hFE) (Min) @ Ic, Vce :
500 @ 10mA 5V
Voltage - Collector Emitter Breakdown (Max) :
45V
Frequency :
100MHz
Datasheets
MPSA18_D26Z
Introducing Transistors - Bipolar (BJT) - Single onsemi MPSA18_D26Z from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Base Part Number:MPSA18, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), MPSA18_D26Z pinout, MPSA18_D26Z datasheet PDF, MPSA18_D26Z amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MPSA18_D26Z ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MPSA18_D26Z


NPN -55°C~150°C TJ 50nA ICBO 1 Elements TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole

MPSA18_D26Z Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 500 @ 10mA 5V DC current gain.As it features a collector emitter saturation voltage of 300mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6.5V can result in a high level of efficiency.There is no device package available from the supplier for this product.Single BJT transistor shows a 45V maximal voltage - Collector EmSingle BJT transistorter Breakdown.When collector current reaches its maximum, it can reach 100mA volts.

MPSA18_D26Z Features


the DC current gain for this device is 500 @ 10mA 5V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6.5V
the supplier device package of TO-92-3


MPSA18_D26Z Applications


There are a lot of ON Semiconductor
MPSA18_D26Z applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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