MPSA14RLRPG
- Mfr.Part #
- MPSA14RLRPG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN DARL 30V 0.5A TO92
- Stock
- 1,121
- In Stock :
- 1,121
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- 500mA
- Transition Frequency :
- 125MHz
- Max Collector Current :
- 500mA
- Number of Terminations :
- 3
- Base Part Number :
- MPSA14
- Continuous Collector Current :
- 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20000 @ 100mA 5V
- Collector Base Voltage (VCBO) :
- 30V
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 30V
- Operating Temperature :
- -55°C~150°C TJ
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- Polarity :
- NPN
- Surface Mount :
- No
- Element Configuration :
- Single
- Frequency - Transition :
- 125MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- RoHS Compliant
- Pin Count :
- 3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Voltage - Rated DC :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 30V
- JESD-609 Code :
- e1
- Number of Elements :
- 1
- Max Power Dissipation :
- 625mW
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Qualification Status :
- Not Qualified
- Mounting Type :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 10V
- Published :
- 2007
- Transistor Application :
- AMPLIFIER
- Power Dissipation :
- 625mW
- Packaging :
- Tape and Box (TB)
- Collector Emitter Saturation Voltage :
- 1.5V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Transistor Type :
- NPN - Darlington
- Terminal Position :
- BOTTOM
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Pbfree Code :
- yes
- Datasheets
- MPSA14RLRPG
MPSA14RLRPG Documents

NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPSA14RLRPG Overview
In this device, the DC current gain is 20000 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 100μA, 100mA.A 500mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 10V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 125MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MPSA14RLRPG Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 500mA
a transition frequency of 125MHz
MPSA14RLRPG Applications
There are a lot of ON Semiconductor
MPSA14RLRPG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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