MPSA14RLRP
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- Mfr.Part #
- MPSA14RLRP
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN DARL 30V 0.5A TO92
- Stock
- 11,991
- In Stock ：
- 11,991
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- RoHS Status :
- RoHS Compliant
- Voltage - Rated DC :
- 30V
- Pin Count :
- 3
- Transistor Type :
- NPN - Darlington
- Terminal Position :
- BOTTOM
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 30V
- Max Power Dissipation :
- 625mW
- JESD-609 Code :
- e1
- Max Collector Current :
- 500mA
- Collector Emitter Saturation Voltage :
- 1.5V
- Qualification Status :
- Not Qualified
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Published :
- 2007
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- Frequency - Transition :
- 125MHz
- Surface Mount :
- No
- Transistor Element Material :
- SILICON
- Polarity :
- NPN
- Current Rating :
- 500mA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Packaging :
- Tape and Box (TB)
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- Base Part Number :
- MPSA14
- Emitter Base Voltage (VEBO) :
- 10V
- Transition Frequency :
- 125MHz
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Power Dissipation :
- 625mW
- Continuous Collector Current :
- 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20000 @ 100mA 5V
- Collector Base Voltage (VCBO) :
- 30V
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Transistor Application :
- AMPLIFIER
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Collector Emitter Breakdown Voltage :
- 30V
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- MPSA14RLRP
NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPSA14RLRPG Overview
In this device, the DC current gain is 20000 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 100μA, 100mA.A 500mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 10V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 125MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MPSA14RLRPG Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 500mA
a transition frequency of 125MHz
MPSA14RLRPG Applications
There are a lot of ON Semiconductor
MPSA14RLRPG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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