MPSA14_D75Z
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- Mfr.Part #
- MPSA14_D75Z
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN DARL 30V 1.2A TO92-3
- Stock
- 26,094
- In Stock ：
- 26,094
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN - Darlington
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Power - Max :
- 625mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20000 @ 100mA 5V
- Operating Temperature :
- -55°C~150°C TJ
- Base Part Number :
- MPSA14
- Packaging :
- Tape and Box (TB)
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Frequency - Transition :
- 125MHz
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- Supplier Device Package :
- TO-92-3
- Current - Collector (Ic) (Max) :
- 1.2A
- Mounting Type :
- Through Hole
- Datasheets
- MPSA14_D75Z
NPN - Darlington -55°C~150°C TJ 100nA ICBO TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPSA14_D75Z Overview
In this device, the DC current gain is 20000 @ 100mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 100μA, 100mA.Product comes in the supplier's device package TO-92-3.There is a 30V maximal voltage in the device due to collector-emitter breakdown.
MPSA14_D75Z Features
the DC current gain for this device is 20000 @ 100mA 5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the supplier device package of TO-92-3
MPSA14_D75Z Applications
There are a lot of ON Semiconductor
MPSA14_D75Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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