MPSA13RLRP
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- Mfr.Part #
- MPSA13RLRP
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN DARL 30V 0.5A TO92
- Stock
- 30,863
- In Stock ：
- 30,863
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Base Part Number :
- MPSA13
- Voltage - Rated DC :
- 30V
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- Reach Compliance Code :
- not_compliant
- RoHS Status :
- Non-RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Contains Lead
- Emitter Base Voltage (VEBO) :
- 10V
- Transition Frequency :
- 125MHz
- Collector Emitter Voltage (VCEO) :
- 30V
- Peak Reflow Temperature (Cel) :
- 240
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Max Power Dissipation :
- 625mW
- JESD-609 Code :
- e0
- Transistor Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Packaging :
- Tape and Box (TB)
- Mount :
- Through Hole
- Continuous Collector Current :
- 500mA
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Polarity :
- NPN
- Current Rating :
- 500mA
- Terminal Position :
- BOTTOM
- Frequency - Transition :
- 125MHz
- Power Dissipation :
- 625mW
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Max Collector Current :
- 500mA
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Collector Base Voltage (VCBO) :
- 30V
- Transistor Application :
- AMPLIFIER
- Collector Emitter Saturation Voltage :
- 1.5V
- Transistor Type :
- NPN - Darlington
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Breakdown Voltage :
- 30V
- Published :
- 2005
- Datasheets
- MPSA13RLRP
NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPSA13RLRP Overview
In this device, the DC current gain is 10000 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1.5V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 100μA, 100mA.Maintaining the continuous collector voltage at 500mA is essential for high efficiency.Keeping the emitter base voltage at 10V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (500mA).125MHz is present in the transition frequency.Maximum collector currents can be below 500mA volts.
MPSA13RLRP Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 500mA
a transition frequency of 125MHz
MPSA13RLRP Applications
There are a lot of ON Semiconductor
MPSA13RLRP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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