MPSA13RLRP

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Breakdown Voltage :

30V

Number of Terminations :

3

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Frequency - Transition :

125MHz

Transistor Element Material :

SILICON

Emitter Base Voltage (VEBO) :

10V

Power Dissipation :

625mW

Current Rating :

500mA

Transistor Application :

AMPLIFIER

Current - Collector Cutoff (Max) :

100nA ICBO

Pin Count :

3

Number of Pins :

3

Polarity :

NPN

Published :

2005

Continuous Collector Current :

500mA

Reach Compliance Code :

not_compliant

Collector Emitter Saturation Voltage :

1.5V

Mount :

Through Hole

Number of Elements :

1

Max Power Dissipation :

625mW

Max Collector Current :

500mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

10000 @ 100mA 5V

Terminal Finish :

Tin/Lead (Sn/Pb)

Transition Frequency :

125MHz

Collector Base Voltage (VCBO) :

30V

Peak Reflow Temperature (Cel) :

240

Lead Free :

Contains Lead

RoHS Status :

Non-RoHS Compliant

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 100µA, 100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Qualification Status :

Not Qualified

Mounting Type :

Through Hole

Transistor Type :

NPN - Darlington

Collector Emitter Voltage (VCEO) :

30V

Time@Peak Reflow Temperature-Max (s) :

30

Base Part Number :

MPSA13

Packaging :

Tape and Box (TB)

Voltage - Rated DC :

30V

Terminal Position :

BOTTOM

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e0