MPSA13RLRMG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Type :

NPN - Darlington

DC Current Gain (hFE) (Min) @ Ic, Vce :

10000 @ 100mA 5V

Current - Collector (Ic) (Max) :

500mA

Mounting Type :

Through Hole

Current - Collector Cutoff (Max) :

100nA ICBO

Polarity/Channel Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

30V

Terminal Position :

BOTTOM

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Number of Elements :

1

Packaging :

Tape and Box (TB)

Frequency - Transition :

125MHz

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 100µA, 100mA

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

TIN SILVER COPPER

Transition Frequency :

125MHz

Qualification Status :

COMMERCIAL

JESD-609 Code :

e1

Power - Max :

625mW

Pin Count :

3

JESD-30 Code :

O-PBCY-T3

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

Surface Mount :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Transistor Application :

AMPLIFIER

Number of Terminations :

3