MPSA13RLRM
- Mfr.Part #
- MPSA13RLRM
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN DARL 30V 0.5A TO92
- Stock
- 34,301
- In Stock :
- 34,301
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e0
- Base Part Number :
- MPSA13
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 30V
- Polarity :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Published :
- 2005
- Reach Compliance Code :
- not_compliant
- Power Dissipation :
- 625mW
- Collector Emitter Breakdown Voltage :
- 30V
- Continuous Collector Current :
- 500mA
- Max Collector Current :
- 500mA
- Lead Free :
- Contains Lead
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Collector Emitter Voltage (VCEO) :
- 30V
- RoHS Status :
- Non-RoHS Compliant
- Element Configuration :
- Single
- Packaging :
- Tape and Box (TB)
- Terminal Position :
- BOTTOM
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Transistor Type :
- NPN - Darlington
- Pin Count :
- 3
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Frequency - Transition :
- 125MHz
- Max Power Dissipation :
- 625mW
- Peak Reflow Temperature (Cel) :
- 240
- Transistor Application :
- AMPLIFIER
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Through Hole
- hFE Min :
- 5000
- Mount :
- Through Hole
- Current Rating :
- 500mA
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Number of Terminations :
- 3
- Qualification Status :
- Not Qualified
- Emitter Base Voltage (VEBO) :
- 10V
- Transition Frequency :
- 125MHz
- Number of Pins :
- 3
- HTS Code :
- 8541.21.00.75
- Datasheets
- MPSA13RLRM

NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPSA13RLRM Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10000 @ 100mA 5V.When VCE saturation is 1.5V @ 100μA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 500mA for high efficiency.Emitter base voltages of 10V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.In the part, the transition frequency is 125MHz.A maximum collector current of 500mA volts can be achieved.
MPSA13RLRM Features
the DC current gain for this device is 10000 @ 100mA 5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 500mA
a transition frequency of 125MHz
MPSA13RLRM Applications
There are a lot of ON Semiconductor
MPSA13RLRM applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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