MPSA13RLRM

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Mfr.Part #
MPSA13RLRM
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
TRANS NPN DARL 30V 0.5A TO92
Stock
34,301
In Stock :
34,301

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
JESD-609 Code :
e0
Base Part Number :
MPSA13
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Voltage - Rated DC :
30V
Polarity :
NPN
Current - Collector Cutoff (Max) :
100nA ICBO
Published :
2005
Reach Compliance Code :
not_compliant
Power Dissipation :
625mW
Collector Emitter Breakdown Voltage :
30V
Continuous Collector Current :
500mA
Max Collector Current :
500mA
Lead Free :
Contains Lead
Terminal Finish :
Tin/Lead (Sn/Pb)
Collector Emitter Voltage (VCEO) :
30V
RoHS Status :
Non-RoHS Compliant
Element Configuration :
Single
Packaging :
Tape and Box (TB)
Terminal Position :
BOTTOM
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 100µA, 100mA
Transistor Type :
NPN - Darlington
Pin Count :
3
ECCN Code :
EAR99
DC Current Gain (hFE) (Min) @ Ic, Vce :
10000 @ 100mA 5V
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Frequency - Transition :
125MHz
Max Power Dissipation :
625mW
Peak Reflow Temperature (Cel) :
240
Transistor Application :
AMPLIFIER
Operating Temperature :
-55°C~150°C TJ
Mounting Type :
Through Hole
hFE Min :
5000
Mount :
Through Hole
Current Rating :
500mA
Transistor Element Material :
SILICON
Collector Base Voltage (VCBO) :
30V
Time@Peak Reflow Temperature-Max (s) :
30
Number of Terminations :
3
Qualification Status :
Not Qualified
Emitter Base Voltage (VEBO) :
10V
Transition Frequency :
125MHz
Number of Pins :
3
HTS Code :
8541.21.00.75
Datasheets
MPSA13RLRM
Introducing Transistors - Bipolar (BJT) - Single onsemi MPSA13RLRM from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:MPSA13, Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Terminations:3, Number of Pins:3, MPSA13RLRM pinout, MPSA13RLRM datasheet PDF, MPSA13RLRM amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MPSA13RLRM ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MPSA13RLRM


NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole

MPSA13RLRM Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10000 @ 100mA 5V.When VCE saturation is 1.5V @ 100μA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 500mA for high efficiency.Emitter base voltages of 10V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.In the part, the transition frequency is 125MHz.A maximum collector current of 500mA volts can be achieved.

MPSA13RLRM Features


the DC current gain for this device is 10000 @ 100mA 5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 500mA
a transition frequency of 125MHz


MPSA13RLRM Applications


There are a lot of ON Semiconductor
MPSA13RLRM applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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