MPSA13RLRA
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- Mfr.Part #
- MPSA13RLRA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN DARL 30V 0.5A TO92
- Stock
- 24,518
- In Stock ：
- 24,518
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 30V
- Surface Mount :
- No
- Emitter Base Voltage (VEBO) :
- 10V
- Current Rating :
- 500mA
- Reach Compliance Code :
- not_compliant
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- NPN - Darlington
- Base Part Number :
- MPSA13
- Operating Temperature :
- -55°C~150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Terminal Position :
- BOTTOM
- Pbfree Code :
- No
- Published :
- 2007
- Time@Peak Reflow Temperature-Max (s) :
- 30
- RoHS Status :
- Non-RoHS Compliant
- Voltage - Rated DC :
- 30V
- JESD-609 Code :
- e0
- Max Breakdown Voltage :
- 30V
- Continuous Collector Current :
- 500mA
- Power Dissipation :
- 625mW
- Max Power Dissipation :
- 625mW
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Base Voltage (VCBO) :
- 30V
- Lead Free :
- Contains Lead
- Number of Elements :
- 1
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 6 days ago)
- Element Configuration :
- Single
- Frequency - Transition :
- 125MHz
- Peak Reflow Temperature (Cel) :
- 240
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Transistor Application :
- AMPLIFIER
- Pin Count :
- 3
- HTS Code :
- 8541.21.00.75
- Max Collector Current :
- 500mA
- Transition Frequency :
- 125MHz
- Qualification Status :
- Not Qualified
- Polarity :
- NPN
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Collector Emitter Voltage (VCEO) :
- 30V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Datasheets
- MPSA13RLRA
MPSA13RLRA Documents
NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
MPSA13RLRA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 10000 @ 100mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 100μA, 100mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 500mA.If the emitter base voltage is kept at 10V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.A transition frequency of 125MHz is present in the part.There is a breakdown input voltage of 30V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
MPSA13RLRA Features
the DC current gain for this device is 10000 @ 100mA 5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 500mA
a transition frequency of 125MHz
MPSA13RLRA Applications
There are a lot of ON Semiconductor
MPSA13RLRA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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