MPSA13G

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Mfr.Part #
MPSA13G
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
TRANS NPN DARL 30V 0.5A TO92
Stock
17,954
In Stock :
17,954

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 100µA, 100mA
Max Power Dissipation :
625mW
Transistor Element Material :
SILICON
Pin Count :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pbfree Code :
yes
Transistor Application :
AMPLIFIER
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Power Dissipation :
625mW
Transistor Type :
NPN - Darlington
Emitter Base Voltage (VEBO) :
10V
JESD-609 Code :
e1
Packaging :
Bulk
Time@Peak Reflow Temperature-Max (s) :
40
Length :
5.2mm
Collector Emitter Breakdown Voltage :
30V
Terminal Position :
BOTTOM
Peak Reflow Temperature (Cel) :
260
Published :
2005
Current - Collector Cutoff (Max) :
100nA ICBO
Collector Base Voltage (VCBO) :
30V
Radiation Hardening :
No
Frequency - Transition :
125MHz
ECCN Code :
EAR99
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Operating Temperature :
-55°C~150°C TJ
Continuous Collector Current :
500mA
Height :
5.33mm
Voltage - Rated DC :
30V
Max Collector Current :
500mA
Element Configuration :
Single
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 2 days ago)
RoHS Status :
RoHS Compliant
Collector Emitter Voltage (VCEO) :
30V
Mounting Type :
Through Hole
Number of Terminations :
3
Current Rating :
500mA
Number of Elements :
1
REACH SVHC :
No SVHC
Weight :
4.535924g
Base Part Number :
MPSA13
Polarity :
NPN
Collector Emitter Saturation Voltage :
1.5V
Surface Mount :
No
Number of Pins :
3
Lead Free :
Lead Free
Transition Frequency :
125MHz
Width :
4.19mm
DC Current Gain (hFE) (Min) @ Ic, Vce :
10000 @ 100mA 5V
Datasheets
MPSA13G
Introducing Transistors - Bipolar (BJT) - Single onsemi MPSA13G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-226-3, TO-92-3 (TO-226AA), Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Terminations:3, Base Part Number:MPSA13, Number of Pins:3, MPSA13G pinout, MPSA13G datasheet PDF, MPSA13G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MPSA13G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MPSA13G


NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole

MPSA13G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10000 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.5V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 100μA, 100mA.Continuous collector voltages of 500mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 10V.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 125MHz.During maximum operation, collector current can be as low as 500mA volts.

MPSA13G Features


the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 500mA
a transition frequency of 125MHz


MPSA13G Applications


There are a lot of ON Semiconductor
MPSA13G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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