MPSA12RLRPG
- Mfr.Part #
- MPSA12RLRPG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN DARL 20V TO92
- Stock
- 33,474
- In Stock :
- 33,474
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Qualification Status :
- Not Qualified
- hFE Min :
- 20000
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 10μA, 10mA
- Max Collector Current :
- 100nA
- Max Power Dissipation :
- 625mW
- Power Dissipation :
- 625mW
- Transistor Element Material :
- SILICON
- Terminal Position :
- BOTTOM
- Collector Emitter Breakdown Voltage :
- 20V
- Polarity :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN - Darlington
- Mount :
- Through Hole
- Lifecycle Status :
- OBSOLETE (Last Updated: 2 days ago)
- Number of Terminations :
- 3
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Published :
- 2002
- Number of Pins :
- 3
- Base Part Number :
- MPSA12
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Emitter Base Voltage (VEBO) :
- 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20000 @ 10mA 5V
- HTS Code :
- 8541.21.00.95
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- JESD-609 Code :
- e1
- Element Configuration :
- Single
- Pbfree Code :
- yes
- RoHS Status :
- RoHS Compliant
- Packaging :
- Tape and Box (TB)
- Voltage - Rated DC :
- 20V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Emitter Voltage (VCEO) :
- 1V
- Pin Count :
- 3
- Datasheets
- MPSA12RLRPG

NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPSA12RLRPG Overview
DC current gain in this device equals 20000 @ 10mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 10μA, 10mA.An emitter's base voltage can be kept at 10V to gain high efficiency.In extreme cases, the collector current can be as low as 100nA volts.
MPSA12RLRPG Features
the DC current gain for this device is 20000 @ 10mA 5V
the vce saturation(Max) is 1V @ 10μA, 10mA
the emitter base voltage is kept at 10V
MPSA12RLRPG Applications
There are a lot of ON Semiconductor
MPSA12RLRPG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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