MPSA12RLRPG
- Mfr.Part #
- MPSA12RLRPG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN DARL 20V TO92
- Stock
- 33,474
- In Stock :
- 33,474
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- MPSA12
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN - Darlington
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- BOTTOM
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 1V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- RoHS Status :
- RoHS Compliant
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 10μA, 10mA
- Lifecycle Status :
- OBSOLETE (Last Updated: 2 days ago)
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Qualification Status :
- Not Qualified
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 625mW
- Emitter Base Voltage (VEBO) :
- 10V
- Number of Elements :
- 1
- Mount :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20000 @ 10mA 5V
- Max Power Dissipation :
- 625mW
- Max Collector Current :
- 100nA
- Published :
- 2002
- Mounting Type :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 20V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- JESD-609 Code :
- e1
- hFE Min :
- 20000
- Polarity :
- NPN
- Voltage - Rated DC :
- 20V
- Packaging :
- Tape and Box (TB)
- HTS Code :
- 8541.21.00.95
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- MPSA12RLRPG
MPSA12RLRPG Documents

NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPSA12RLRPG Overview
DC current gain in this device equals 20000 @ 10mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 10μA, 10mA.An emitter's base voltage can be kept at 10V to gain high efficiency.In extreme cases, the collector current can be as low as 100nA volts.
MPSA12RLRPG Features
the DC current gain for this device is 20000 @ 10mA 5V
the vce saturation(Max) is 1V @ 10μA, 10mA
the emitter base voltage is kept at 10V
MPSA12RLRPG Applications
There are a lot of ON Semiconductor
MPSA12RLRPG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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