MPSA12RLRP

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

20000 @ 10mA 5V

JESD-609 Code :

e0

Max Collector Current :

100nA

Published :

2002

Reach Compliance Code :

not_compliant

Power Dissipation :

625mW

hFE Min :

20000

Voltage - Rated DC :

20V

Peak Reflow Temperature (Cel) :

240

Polarity :

NPN

Pin Count :

3

Qualification Status :

Not Qualified

Collector Emitter Voltage (VCEO) :

20V

Mounting Type :

Through Hole

Element Configuration :

Single

HTS Code :

8541.21.00.95

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Transistor Element Material :

SILICON

Transistor Type :

NPN - Darlington

Vce Saturation (Max) @ Ib, Ic :

1V @ 10μA, 10mA

Max Power Dissipation :

625mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Current - Collector Cutoff (Max) :

100nA ICBO

RoHS Status :

Non-RoHS Compliant

Number of Elements :

1

Terminal Finish :

Tin/Lead (Sn/Pb)

Packaging :

Tape and Box (TB)

Number of Pins :

3

Terminal Position :

BOTTOM

Number of Terminations :

3

Collector Emitter Breakdown Voltage :

20V

Base Part Number :

MPSA12

Lead Free :

Contains Lead

Emitter Base Voltage (VEBO) :

10V

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

30