MPSA12RLRAG
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- Mfr.Part #
- MPSA12RLRAG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN DARL 20V TO92
- Stock
- 22,563
- In Stock ：
- 22,563
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- 20V
- Mount :
- Through Hole
- Published :
- 2002
- Base Part Number :
- MPSA12
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Number of Elements :
- 1
- JESD-609 Code :
- e1
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Breakdown Voltage :
- 20V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Emitter Base Voltage (VEBO) :
- 10V
- Number of Terminations :
- 3
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 10μA, 10mA
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20000 @ 10mA 5V
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 625mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- hFE Min :
- 20000
- Power Dissipation :
- 625mW
- RoHS Status :
- RoHS Compliant
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Transistor Type :
- NPN - Darlington
- Collector Emitter Voltage (VCEO) :
- 20V
- Collector Emitter Saturation Voltage :
- 1V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Terminal Position :
- BOTTOM
- Qualification Status :
- Not Qualified
- Max Collector Current :
- 100nA
- Polarity :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pin Count :
- 3
- Datasheets
- MPSA12RLRAG
NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
MPSA12RLRAG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20000 @ 10mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 10μA, 10mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 10V.During maximum operation, collector current can be as low as 100nA volts.
MPSA12RLRAG Features
the DC current gain for this device is 20000 @ 10mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 10μA, 10mA
the emitter base voltage is kept at 10V
MPSA12RLRAG Applications
There are a lot of ON Semiconductor
MPSA12RLRAG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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