MPSA12RLRA

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Mfr.Part #
MPSA12RLRA
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
TRANS NPN DARL 20V TO92
Stock
13,157
In Stock :
13,157

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Mounting Type :
Through Hole
Transition Frequency :
100MHz
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Qualification Status :
Not Qualified
Vce Saturation (Max) @ Ib, Ic :
1V @ 10μA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce :
20000 @ 10mA 5V
Current - Collector Cutoff (Max) :
100nA ICBO
Power Dissipation :
625mW
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
HTS Code :
8541.21.00.95
Time@Peak Reflow Temperature-Max (s) :
30
Pbfree Code :
No
Voltage - Rated DC :
20V
Base Part Number :
MPSA12
Reach Compliance Code :
not_compliant
Peak Reflow Temperature (Cel) :
240
Number of Terminations :
3
Collector Emitter Breakdown Voltage :
20V
Max Power Dissipation :
625mW
Terminal Finish :
Tin/Lead (Sn/Pb)
Polarity :
NPN
JESD-609 Code :
e0
Transistor Type :
NPN - Darlington
Operating Temperature :
-55°C~150°C TJ
Packaging :
Tape and Reel (TR)
Published :
2002
Emitter Base Voltage (VEBO) :
10V
hFE Min :
20000
Terminal Position :
BOTTOM
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 1 week ago)
Max Collector Current :
100nA
Collector Emitter Voltage (VCEO) :
1V
Number of Pins :
3
Element Configuration :
Single
Lead Free :
Contains Lead
Number of Elements :
1
RoHS Status :
Non-RoHS Compliant
Pin Count :
3
Transistor Element Material :
SILICON
Mount :
Through Hole
Datasheets
MPSA12RLRA
Introducing Transistors - Bipolar (BJT) - Single onsemi MPSA12RLRA from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Base Part Number:MPSA12, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, MPSA12RLRA pinout, MPSA12RLRA datasheet PDF, MPSA12RLRA amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MPSA12RLRA ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MPSA12RLRA


NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole

MPSA12RLRA Overview


In this device, the DC current gain is 20000 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 10μA, 10mA.Keeping the emitter base voltage at 10V allows for a high level of efficiency.100MHz is present in the transition frequency.Maximum collector currents can be below 100nA volts.

MPSA12RLRA Features


the DC current gain for this device is 20000 @ 10mA 5V
the vce saturation(Max) is 1V @ 10μA, 10mA
the emitter base voltage is kept at 10V
a transition frequency of 100MHz


MPSA12RLRA Applications


There are a lot of ON Semiconductor
MPSA12RLRA applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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