MPSA12G
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- Mfr.Part #
- MPSA12G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN DARL 20V TO92
- Stock
- 22,994
- In Stock ：
- 22,994
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 10V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 10μA, 10mA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Qualification Status :
- Not Qualified
- Collector Emitter Voltage (VCEO) :
- 20V
- Number of Elements :
- 1
- Pin Count :
- 3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- BOTTOM
- Base Part Number :
- MPSA12
- Element Configuration :
- Single
- Mount :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 20V
- Packaging :
- Bulk
- Lifecycle Status :
- Obsolete (Last Updated: 2 weeks ago)
- Number of Terminations :
- 3
- Max Power Dissipation :
- 625mW
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 625mW
- Pbfree Code :
- yes
- RoHS Status :
- RoHS Compliant
- hFE Min :
- 20000
- Published :
- 2002
- Number of Pins :
- 3
- Voltage - Rated DC :
- 20V
- JESD-609 Code :
- e1
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Mounting Type :
- Through Hole
- Polarity :
- NPN
- Transistor Type :
- NPN - Darlington
- Lead Free :
- Lead Free
- Max Collector Current :
- 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20000 @ 10mA 5V
- Collector Emitter Saturation Voltage :
- 1V
- Datasheets
- MPSA12G
MPSA12G Documents
,TO-226_straightlead.jpg)
NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
MPSA12G Overview
DC current gain in this device equals 20000 @ 10mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 10μA, 10mA.An emitter's base voltage can be kept at 10V to gain high efficiency.In extreme cases, the collector current can be as low as 100nA volts.
MPSA12G Features
the DC current gain for this device is 20000 @ 10mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 10μA, 10mA
the emitter base voltage is kept at 10V
MPSA12G Applications
There are a lot of ON Semiconductor
MPSA12G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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