MPSA12G
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- Mfr.Part #
- MPSA12G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN DARL 20V TO92
- Stock
- 22,994
- In Stock ：
- 22,994
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Collector Emitter Breakdown Voltage :
- 20V
- Max Power Dissipation :
- 625mW
- Transistor Type :
- NPN - Darlington
- hFE Min :
- 20000
- Packaging :
- Bulk
- Emitter Base Voltage (VEBO) :
- 10V
- Polarity :
- NPN
- Max Collector Current :
- 100nA
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- RoHS Status :
- RoHS Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Qualification Status :
- Not Qualified
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 1V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20000 @ 10mA 5V
- Terminal Position :
- BOTTOM
- JESD-609 Code :
- e1
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Elements :
- 1
- Pin Count :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Voltage - Rated DC :
- 20V
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Lifecycle Status :
- Obsolete (Last Updated: 2 weeks ago)
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 20V
- Base Part Number :
- MPSA12
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 10μA, 10mA
- Published :
- 2002
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation :
- 625mW
- Datasheets
- MPSA12G
,TO-226_straightlead.jpg)
NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
MPSA12G Overview
DC current gain in this device equals 20000 @ 10mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 10μA, 10mA.An emitter's base voltage can be kept at 10V to gain high efficiency.In extreme cases, the collector current can be as low as 100nA volts.
MPSA12G Features
the DC current gain for this device is 20000 @ 10mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 10μA, 10mA
the emitter base voltage is kept at 10V
MPSA12G Applications
There are a lot of ON Semiconductor
MPSA12G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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