MPSA12
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- Mfr.Part #
- MPSA12
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN DARL 20V TO92
- Stock
- 4,873
- In Stock ：
- 4,873
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Transistor Application :
- AMPLIFIER
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Terminal Finish :
- TIN SILVER COPPER
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Max Collector Current :
- 1A
- Collector Base Voltage (VCBO) :
- 100V
- Voltage - Collector Emitter Breakdown (Max) :
- 20V
- Continuous Collector Current :
- 450mA
- Collector Emitter Voltage (VCEO) :
- 100V
- Lead Free :
- Contains Lead
- Number of Elements :
- 1
- Packaging :
- Bulk
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 10μA, 10mA
- Surface Mount :
- No
- Pbfree Code :
- yes
- JESD-30 Code :
- O-PBCY-T3
- Polarity :
- NPN
- Reach Compliance Code :
- Unknown
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Voltage - Rated DC :
- 20V
- Mounting Type :
- Through Hole
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Transistor Type :
- NPN - Darlington
- Current Rating :
- 10mA
- Terminal Position :
- BOTTOM
- Qualification Status :
- COMMERCIAL
- Emitter Base Voltage (VEBO) :
- 12V
- Power Dissipation :
- 625mW
- JESD-609 Code :
- e1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20000 @ 10mA 5V
- Published :
- 2002
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- MPSA12
MPSA12 Documents
NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
MPSA12 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20000 @ 10mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 10μA, 10mA.Single BJT transistor is recommended to keep the continuous collector voltage at 450mA in order to achieve high efficiency.The emitter base voltage can be kept at 12V for high efficiency.The current rating of this fuse is 10mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Device displays Collector Emitter Breakdown (20V maximal voltage).Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
MPSA12 Features
the DC current gain for this device is 20000 @ 10mA 5V
the vce saturation(Max) is 1V @ 10μA, 10mA
the emitter base voltage is kept at 12V
the current rating of this device is 10mA
MPSA12 Applications
There are a lot of Rochester Electronics, LLC
MPSA12 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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