MPSA12

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Mfr.Part #
MPSA12
Manufacturer
NTE Electronics, Inc.
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
TRANS NPN DARL 20V TO92
Stock
4,873
In Stock :
4,873

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Manufacturer :
NTE Electronics, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Lead Free :
Contains Lead
Terminal Position :
BOTTOM
JESD-609 Code :
e1
DC Current Gain (hFE) (Min) @ Ic, Vce :
20000 @ 10mA 5V
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Terminal Finish :
TIN SILVER COPPER
Number of Elements :
1
Published :
2002
Packaging :
Bulk
Element Configuration :
Single
JESD-30 Code :
O-PBCY-T3
Polarity :
NPN
Reach Compliance Code :
Unknown
Collector Emitter Voltage (VCEO) :
100V
Transistor Element Material :
SILICON
Max Collector Current :
1A
Continuous Collector Current :
450mA
Voltage - Collector Emitter Breakdown (Max) :
20V
Vce Saturation (Max) @ Ib, Ic :
1V @ 10μA, 10mA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
3
Transistor Type :
NPN - Darlington
Power Dissipation :
625mW
Pbfree Code :
yes
Transistor Application :
AMPLIFIER
Pin Count :
3
Current Rating :
10mA
Peak Reflow Temperature (Cel) :
Not Applicable
Emitter Base Voltage (VEBO) :
12V
Mounting Type :
Through Hole
Collector Base Voltage (VCBO) :
100V
Voltage - Rated DC :
20V
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Operating Temperature :
-55°C~150°C TJ
Current - Collector Cutoff (Max) :
100nA ICBO
RoHS Status :
ROHS3 Compliant
Surface Mount :
No
Qualification Status :
COMMERCIAL
Datasheets
MPSA12
Introducing Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. MPSA12 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-226-3, TO-92-3 (TO-226AA), Operating Temperature:-55°C~150°C TJ, MPSA12 pinout, MPSA12 datasheet PDF, MPSA12 amp .Beyond Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. MPSA12 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NTE Electronics, Inc. MPSA12


NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole

MPSA12 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20000 @ 10mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 10μA, 10mA.Single BJT transistor is recommended to keep the continuous collector voltage at 450mA in order to achieve high efficiency.The emitter base voltage can be kept at 12V for high efficiency.The current rating of this fuse is 10mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Device displays Collector Emitter Breakdown (20V maximal voltage).Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.

MPSA12 Features


the DC current gain for this device is 20000 @ 10mA 5V
the vce saturation(Max) is 1V @ 10μA, 10mA
the emitter base voltage is kept at 12V
the current rating of this device is 10mA


MPSA12 Applications


There are a lot of Rochester Electronics, LLC
MPSA12 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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