MPSA06RLRMG
- Mfr.Part #
- MPSA06RLRMG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A TO92
- Stock
- 10,944
- In Stock :
- 10,944
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e1
- Terminal Position :
- BOTTOM
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- AMPLIFIER
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Configuration :
- Single
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Through Hole
- JESD-30 Code :
- O-PBCY-T3
- Packaging :
- Tape and Box (TB)
- Operating Temperature :
- -55°C~150°C TJ
- Surface Mount :
- No
- Pin Count :
- 3
- Power - Max :
- 625mW
- Qualification Status :
- COMMERCIAL
- Current - Collector Cutoff (Max) :
- 100nA
- Transition Frequency :
- 100MHz
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Finish :
- TIN SILVER COPPER
- Transistor Type :
- NPN
- Pbfree Code :
- yes
- Current - Collector (Ic) (Max) :
- 500mA
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Frequency - Transition :
- 100MHz
- Datasheets
- MPSA06RLRMG

NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPSA06RLRMG Overview
In this device, the DC current gain is 100 @ 100mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 100mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.There is a 80V maximal voltage in the device due to collector-emitter breakdown.
MPSA06RLRMG Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
a transition frequency of 100MHz
MPSA06RLRMG Applications
There are a lot of Rochester Electronics, LLC
MPSA06RLRMG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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