MPSA06RLG
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- Mfr.Part #
- MPSA06RLG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A TO92
- Stock
- 33,481
- In Stock ：
- 33,481
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 625mW
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA
- Supplier Device Package :
- TO-92-3
- Frequency - Transition :
- 100MHz
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Current - Collector (Ic) (Max) :
- 500mA
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Datasheets
- MPSA06RLG
NPN -55°C~150°C TJ 100nA TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
MPSA06RLG Overview
In this device, the DC current gain is 100 @ 100mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 100mA.Product comes in the supplier's device package TO-92-3.There is a 80V maximal voltage in the device due to collector-emitter breakdown.
MPSA06RLG Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the supplier device package of TO-92-3
MPSA06RLG Applications
There are a lot of Rochester Electronics, LLC
MPSA06RLG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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