MPSA06RL1
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- Mfr.Part #
- MPSA06RL1
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A TO92
- Stock
- 25,039
- In Stock ：
- 25,039
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- BOTTOM
- Max Collector Current :
- 500mA
- Collector Emitter Voltage (VCEO) :
- 250mV
- JESD-30 Code :
- O-PBCY-T3
- Published :
- 2009
- Pin Count :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Gain Bandwidth Product :
- 100MHz
- Number of Terminations :
- 3
- JESD-609 Code :
- e0
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 240
- Emitter Base Voltage (VEBO) :
- 4V
- ECCN Code :
- EAR99
- Additional Feature :
- EUROPEAN PART NUMBER
- Lead Free :
- Contains Lead
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Qualification Status :
- Not Qualified
- Base Part Number :
- MPSA06
- Number of Elements :
- 1
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Collector Emitter Breakdown Voltage :
- 80V
- Reach Compliance Code :
- not_compliant
- Element Configuration :
- Single
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- RoHS Status :
- Non-RoHS Compliant
- hFE Min :
- 100
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 625mW
- Voltage - Rated DC :
- 80V
- Current Rating :
- 500mA
- Polarity/Channel Type :
- NPN
- HTS Code :
- 8541.21.00.95
- Current - Collector Cutoff (Max) :
- 100nA
- Mount :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Packaging :
- Tape and Reel (TR)
- Transition Frequency :
- 100MHz
- Collector Emitter Saturation Voltage :
- 250mV
- Transistor Type :
- NPN
- Collector Base Voltage (VCBO) :
- 80V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- AMPLIFIER
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Datasheets
- MPSA06RL1
MPSA06RL1 Documents
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
MPSA06RL1 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 100mA 1V.The collector emitter saturation voltage is 250mV, which allows for maximum design flexibility.When VCE saturation is 250mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 4V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.In the part, the transition frequency is 100MHz.A maximum collector current of 500mA volts can be achieved.
MPSA06RL1 Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MPSA06RL1 Applications
There are a lot of ON Semiconductor
MPSA06RL1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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