MPSA06RL
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- Mfr.Part #
- MPSA06RL
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A TO92
- Stock
- 24,861
- In Stock ：
- 24,861
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 100nA
- Element Configuration :
- Single
- Published :
- 2009
- Collector Emitter Saturation Voltage :
- 250mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 100
- Current Rating :
- 500mA
- Transition Frequency :
- 100MHz
- HTS Code :
- 8541.21.00.95
- Collector Emitter Breakdown Voltage :
- 80V
- Lead Free :
- Contains Lead
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Application :
- AMPLIFIER
- Collector Base Voltage (VCBO) :
- 80V
- Mount :
- Through Hole
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- 240
- Base Part Number :
- MPSA06
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Transistor Type :
- NPN
- Max Power Dissipation :
- 625mW
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 30
- RoHS Status :
- Non-RoHS Compliant
- Max Collector Current :
- 500mA
- Additional Feature :
- EUROPEAN PART NUMBER
- JESD-609 Code :
- e0
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 100MHz
- Operating Temperature :
- -55°C~150°C TJ
- Qualification Status :
- Not Qualified
- Reach Compliance Code :
- not_compliant
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Voltage - Rated DC :
- 80V
- Terminal Position :
- BOTTOM
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 250mV
- Emitter Base Voltage (VEBO) :
- 4V
- Mounting Type :
- Through Hole
- Datasheets
- MPSA06RL
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
MPSA06RL Overview
In this device, the DC current gain is 100 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 100mA.With the emitter base voltage set at 4V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MPSA06RL Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MPSA06RL Applications
There are a lot of ON Semiconductor
MPSA06RL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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