MPSA06RA
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- Mfr.Part #
- MPSA06RA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A TO92-3
- Stock
- 4,829
- In Stock ：
- 4,829
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 500mA
- Lead Free :
- Lead Free
- Transistor Type :
- NPN
- Max Power Dissipation :
- 625mW
- Width :
- 4.19mm
- Collector Emitter Voltage (VCEO) :
- 80V
- Transition Frequency :
- 100MHz
- Number of Terminations :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Mount :
- Through Hole
- Published :
- 2011
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Weight :
- 201mg
- Qualification Status :
- Not Qualified
- Height :
- 5.33mm
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- MPSA06
- Current Rating :
- 500mA
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 80V
- Pbfree Code :
- yes
- Power Dissipation :
- 625mW
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Gain Bandwidth Product :
- 100MHz
- Collector Emitter Saturation Voltage :
- 250mV
- Emitter Base Voltage (VEBO) :
- 4V
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 80V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current - Collector Cutoff (Max) :
- 100nA
- Transistor Element Material :
- SILICON
- Length :
- 5.2mm
- Transistor Application :
- AMPLIFIER
- JESD-609 Code :
- e1
- hFE Min :
- 100
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Mounting Type :
- Through Hole
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Terminal Position :
- BOTTOM
- Collector Base Voltage (VCBO) :
- 80V
- Number of Elements :
- 1
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Factory Lead Time :
- 26 Weeks
- Voltage - Rated DC :
- 80V
- Frequency :
- 100MHz
- Datasheets
- MPSA06RA
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
MPSA06RA Overview
In this device, the DC current gain is 100 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 250mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 10mA, 100mA.Keeping the emitter base voltage at 4V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (500mA).100MHz is present in the transition frequency.An input voltage of 80V volts is the breakdown voltage.Maximum collector currents can be below 500mA volts.
MPSA06RA Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MPSA06RA Applications
There are a lot of ON Semiconductor
MPSA06RA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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