MPSA06RA
- Mfr.Part #
- MPSA06RA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A TO92-3
- Stock
- 4,829
- In Stock :
- 4,829
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Qualification Status :
- Not Qualified
- Height :
- 5.33mm
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Pbfree Code :
- yes
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Mounting Type :
- Through Hole
- Packaging :
- Tape and Reel (TR)
- Gain Bandwidth Product :
- 100MHz
- REACH SVHC :
- No SVHC
- Current Rating :
- 500mA
- Transistor Type :
- NPN
- Length :
- 5.2mm
- Voltage - Rated DC :
- 80V
- Frequency :
- 100MHz
- Lead Free :
- Lead Free
- JESD-609 Code :
- e1
- Weight :
- 201mg
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Transistor Application :
- AMPLIFIER
- Published :
- 2011
- Max Collector Current :
- 500mA
- Transition Frequency :
- 100MHz
- Collector Base Voltage (VCBO) :
- 80V
- Number of Elements :
- 1
- Base Part Number :
- MPSA06
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 625mW
- Collector Emitter Breakdown Voltage :
- 80V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Max Power Dissipation :
- 625mW
- Current - Collector Cutoff (Max) :
- 100nA
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Number of Terminations :
- 3
- Max Breakdown Voltage :
- 80V
- Width :
- 4.19mm
- Terminal Position :
- BOTTOM
- Collector Emitter Saturation Voltage :
- 250mV
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Polarity/Channel Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 80V
- Factory Lead Time :
- 26 Weeks
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Emitter Base Voltage (VEBO) :
- 4V
- hFE Min :
- 100
- Datasheets
- MPSA06RA
MPSA06RA Documents

NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
MPSA06RA Overview
In this device, the DC current gain is 100 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 250mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 10mA, 100mA.Keeping the emitter base voltage at 4V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (500mA).100MHz is present in the transition frequency.An input voltage of 80V volts is the breakdown voltage.Maximum collector currents can be below 500mA volts.
MPSA06RA Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MPSA06RA Applications
There are a lot of ON Semiconductor
MPSA06RA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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