MPS8099RLRPG
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- Mfr.Part #
- MPS8099RLRPG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A TO92
- Stock
- 19,739
- In Stock ：
- 19,739
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Through Hole
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Max Power Dissipation :
- 625mW
- Gain Bandwidth Product :
- 150MHz
- Base Part Number :
- MPS8099
- Published :
- 2007
- Transition Frequency :
- 150MHz
- Collector Emitter Breakdown Voltage :
- 80V
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Voltage - Rated DC :
- 80V
- Current Rating :
- 500mA
- Transistor Type :
- NPN
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 100nA
- Collector Base Voltage (VCBO) :
- 80V
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 500mA
- Collector Emitter Saturation Voltage :
- 400mV
- Operating Temperature :
- -55°C~150°C TJ
- hFE Min :
- 100
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1mA 5V
- Terminal Position :
- BOTTOM
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 4V
- Frequency :
- 150MHz
- Packaging :
- Tape and Box (TB)
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- JESD-609 Code :
- e1
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Power Dissipation :
- 625mW
- Radiation Hardening :
- No
- Transistor Application :
- AMPLIFIER
- Collector Emitter Voltage (VCEO) :
- 80V
- RoHS Status :
- RoHS Compliant
- Datasheets
- MPS8099RLRPG
MPS8099RLRPG Documents
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPS8099RLRPG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 1mA 5V.With a collector emitter saturation voltage of 400mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 100mA.If the emitter base voltage is kept at 4V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.A transition frequency of 150MHz is present in the part.Collector current can be as low as 500mA volts at its maximum.
MPS8099RLRPG Features
the DC current gain for this device is 100 @ 1mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 150MHz
MPS8099RLRPG Applications
There are a lot of ON Semiconductor
MPS8099RLRPG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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