MPS8099G
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- Mfr.Part #
- MPS8099G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A TO92
- Stock
- 16,879
- In Stock ：
- 16,879
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 80V
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 400mV
- Terminal Position :
- BOTTOM
- Transition Frequency :
- 150MHz
- hFE Min :
- 100
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1mA 5V
- Power Dissipation :
- 625mW
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Gain Bandwidth Product :
- 150MHz
- Mounting Type :
- Through Hole
- Frequency :
- 150MHz
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Published :
- 2006
- Current - Collector Cutoff (Max) :
- 100nA
- Collector Base Voltage (VCBO) :
- 80V
- JESD-609 Code :
- e1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Voltage (VCEO) :
- 80V
- REACH SVHC :
- Unknown
- Width :
- 4.191mm
- Number of Terminations :
- 3
- Length :
- 5.1816mm
- Surface Mount :
- No
- Current Rating :
- 500mA
- Pin Count :
- 3
- RoHS Status :
- RoHS Compliant
- Weight :
- 4.535924g
- Max Collector Current :
- 500mA
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 4 days ago)
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 625mW
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Base Part Number :
- MPS8099
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Packaging :
- Bulk
- Voltage - Rated DC :
- 80V
- Transistor Application :
- AMPLIFIER
- Height :
- 5.334mm
- Emitter Base Voltage (VEBO) :
- 6V
- Element Configuration :
- Single
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- MPS8099G
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
MPS8099G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 1mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 400mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 5mA, 100mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 150MHz.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
MPS8099G Features
the DC current gain for this device is 100 @ 1mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 150MHz
MPS8099G Applications
There are a lot of ON Semiconductor
MPS8099G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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