MPS8098G
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- Mfr.Part #
- MPS8098G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.5A TO92
- Stock
- 39,300
- In Stock ：
- 39,300
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 4V
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Position :
- BOTTOM
- Mount :
- Through Hole
- Number of Pins :
- 3
- RoHS Status :
- RoHS Compliant
- Power Dissipation :
- 625mW
- Base Part Number :
- MPS8098
- Max Power Dissipation :
- 625mW
- Pin Count :
- 3
- Qualification Status :
- Not Qualified
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 60V
- JESD-609 Code :
- e1
- Lifecycle Status :
- OBSOLETE (Last Updated: 1 week ago)
- Pbfree Code :
- yes
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Transistor Application :
- AMPLIFIER
- Frequency :
- 150MHz
- Collector Emitter Saturation Voltage :
- 400mV
- Collector Emitter Breakdown Voltage :
- 60V
- Current - Collector Cutoff (Max) :
- 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1mA 5V
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- hFE Min :
- 100
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Transition Frequency :
- 150MHz
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Voltage - Rated DC :
- 60V
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2006
- Current Rating :
- 500mA
- Mounting Type :
- Through Hole
- Gain Bandwidth Product :
- 150MHz
- Packaging :
- Bulk
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Max Collector Current :
- 500mA
- Polarity/Channel Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 60V
- Datasheets
- MPS8098G
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
MPS8098G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 1mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 400mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 4V.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 150MHz.During maximum operation, collector current can be as low as 500mA volts.
MPS8098G Features
the DC current gain for this device is 100 @ 1mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 150MHz
MPS8098G Applications
There are a lot of ON Semiconductor
MPS8098G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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