MPS8099RLRAG
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- Mfr.Part #
- MPS8099RLRAG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A TO92
- Stock
- 19,367
- In Stock ：
- 19,367
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 80V
- Collector Base Voltage (VCBO) :
- 80V
- Power Dissipation :
- 625mW
- Transistor Application :
- AMPLIFIER
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Terminal Position :
- BOTTOM
- Frequency :
- 150MHz
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1mA 5V
- Transistor Element Material :
- SILICON
- Current Rating :
- 500mA
- ECCN Code :
- EAR99
- hFE Min :
- 100
- Max Power Dissipation :
- 625mW
- Number of Pins :
- 3
- Pbfree Code :
- yes
- REACH SVHC :
- Unknown
- Gain Bandwidth Product :
- 150MHz
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e1
- Collector Emitter Breakdown Voltage :
- 80V
- Max Collector Current :
- 500mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 400mV
- Width :
- 4.19mm
- Polarity/Channel Type :
- NPN
- Weight :
- 4.535924g
- Max Breakdown Voltage :
- 80V
- RoHS Status :
- RoHS Compliant
- Mount :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 4V
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Voltage - Rated DC :
- 80V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Through Hole
- Base Part Number :
- MPS8099
- Published :
- 2006
- Transistor Type :
- NPN
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 5.2mm
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Transition Frequency :
- 150MHz
- Current - Collector Cutoff (Max) :
- 100nA
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Height :
- 5.33mm
- Number of Terminations :
- 3
- Pin Count :
- 3
- Datasheets
- MPS8099RLRAG
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
MPS8099RLRAG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 1mA 5V.With a collector emitter saturation voltage of 400mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 100mA.If the emitter base voltage is kept at 4V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.A transition frequency of 150MHz is present in the part.There is a breakdown input voltage of 80V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
MPS8099RLRAG Features
the DC current gain for this device is 100 @ 1mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 150MHz
MPS8099RLRAG Applications
There are a lot of ON Semiconductor
MPS8099RLRAG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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