MPS8099RLRMG
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- Mfr.Part #
- MPS8099RLRMG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A TO92
- Stock
- 21,513
- In Stock ：
- 21,513
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Polarity/Channel Type :
- NPN
- Current Rating :
- 500mA
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- 40
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1mA 5V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Operating Temperature :
- -55°C~150°C TJ
- Collector Base Voltage (VCBO) :
- 80V
- hFE Min :
- 100
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Collector Emitter Breakdown Voltage :
- 80V
- Element Configuration :
- Single
- Base Part Number :
- MPS8099
- Mount :
- Through Hole
- Gain Bandwidth Product :
- 150MHz
- Qualification Status :
- Not Qualified
- Max Power Dissipation :
- 625mW
- JESD-609 Code :
- e1
- Mounting Type :
- Through Hole
- Transistor Application :
- AMPLIFIER
- Transition Frequency :
- 150MHz
- Published :
- 2007
- HTS Code :
- 8541.21.00.75
- Number of Elements :
- 1
- Pin Count :
- 3
- Max Collector Current :
- 500mA
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector Cutoff (Max) :
- 100nA
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 4V
- Collector Emitter Voltage (VCEO) :
- 400mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Box (TB)
- Voltage - Rated DC :
- 80V
- Collector Emitter Saturation Voltage :
- 400mV
- ECCN Code :
- EAR99
- Terminal Position :
- BOTTOM
- RoHS Status :
- RoHS Compliant
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Datasheets
- MPS8099RLRMG
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPS8099RLRMG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 1mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 400mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 4V.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 150MHz.During maximum operation, collector current can be as low as 500mA volts.
MPS8099RLRMG Features
the DC current gain for this device is 100 @ 1mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 150MHz
MPS8099RLRMG Applications
There are a lot of ON Semiconductor
MPS8099RLRMG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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