MP6K14TCR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Type :

2 N-Channel (Dual)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

30V

Published :

2011

Input Capacitance (Ciss) (Max) @ Vds :

470pF @ 10V

Number of Elements :

2

Max Power Dissipation :

2W

Operating Temperature :

150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

7.3nC @ 5V

Package / Case :

6-SMD, Flat Leads

Continuous Drain Current (ID) :

8A

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PDSO-F6

Drain to Source Voltage (Vdss) :

30V

Drain Current-Max (Abs) (ID) :

8A

ECCN Code :

EAR99

Mount :

Surface Mount

JESD-609 Code :

e2

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

25m Ω @ 8A, 10V

Number of Terminations :

6

Pin Count :

6

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.032Ohm

Terminal Finish :

TIN COPPER

Base Part Number :

*K14

Power - Max :

2W

Peak Reflow Temperature (Cel) :

260

FET Feature :

Logic Level Gate

Case Connection :

DRAIN

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

10