MP6K11TCR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

12A

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Logic Level Gate

Continuous Drain Current (ID) :

3.5A

Time@Peak Reflow Temperature-Max (s) :

10

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On (Max) @ Id, Vgs :

98m Ω @ 3.5A, 10V

Terminal Finish :

TIN COPPER

Operating Temperature :

150°C TJ

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

1.9nC @ 5V

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Number of Elements :

2

Power - Max :

2W

Package / Case :

6-SMD, Flat Leads

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

6

Mount :

Surface Mount

JESD-30 Code :

R-PDSO-F6

Published :

2011

Drain-source On Resistance-Max :

0.14Ohm

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Pin Count :

6

Packaging :

Tape and Reel (TR)

Base Part Number :

*K11

FET Type :

2 N-Channel (Dual)

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Max Power Dissipation :

2W

JESD-609 Code :

e2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

30V

Input Capacitance (Ciss) (Max) @ Vds :

85pF @ 10V