MMSTA64T146
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- Mfr.Part #
- MMSTA64T146
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 30V 0.3A SMT3
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Current - Collector (Ic) (Max) :
- 300mA
- Polarity :
- PNP
- Terminal Form :
- Gull wing
- Power Dissipation :
- 200mW
- Max Collector Current :
- 300mA
- Published :
- 1998
- Collector Base Voltage (VCBO) :
- 30V
- Transistor Type :
- PNP - Darlington
- Transistor Application :
- AMPLIFIER
- Lead Free :
- Lead Free
- Collector-Base Capacitance-Max :
- 7pF
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 10V
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20000 @ 100mA 5V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Voltage (VCEO) :
- 30V
- Collector Emitter Saturation Voltage :
- 1.5V
- Continuous Collector Current :
- 500mA
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 30V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Factory Lead Time :
- 7 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 125MHz
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 10000
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 125MHz
- Max Power Dissipation :
- 200mW
- Number of Pins :
- 3
- HTS Code :
- 8541.21.00.75
- Operating Temperature (Max) :
- 150°C
- Datasheets
- MMSTA64T146
PNP - Darlington 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMSTA64T146 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20000 @ 100mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.5V.Single BJT transistor is recommended to keep the continuous collector voltage at 500mA in order to achieve high efficiency.The emitter base voltage can be kept at 10V for high efficiency.The part has a transition frequency of 125MHz.Single BJT transistor is possible to have a collector current as low as 300mA volts at Single BJT transistors maximum.
MMSTA64T146 Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the emitter base voltage is kept at 10V
a transition frequency of 125MHz
MMSTA64T146 Applications
There are a lot of ROHM Semiconductor
MMSTA64T146 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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