MMST2907AT146
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- Mfr.Part #
- MMST2907AT146
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.6A SMT3
- Stock
- 1,057
- In Stock ：
- 1,057
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP
- Voltage - Rated DC :
- -60V
- Collector Emitter Saturation Voltage :
- -1.6V
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- PNP
- Pbfree Code :
- yes
- hFE Min :
- 50
- Transition Frequency :
- 200MHz
- Turn Off Time-Max (toff) :
- 100ns
- Collector Emitter Breakdown Voltage :
- 60V
- Collector-Base Capacitance-Max :
- 7pF
- Collector Base Voltage (VCBO) :
- -60V
- Max Power Dissipation :
- 200mW
- Number of Pins :
- 3
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 1.6V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Number of Terminations :
- 3
- Base Part Number :
- T2907A
- Power - Max :
- 200mW
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Emitter Base Voltage (VEBO) :
- -5V
- Operating Temperature :
- 150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector Cutoff (Max) :
- 100nA
- Mounting Type :
- Surface Mount
- Published :
- 2007
- Continuous Collector Current :
- -600mA
- Max Collector Current :
- 600mA
- Number of Elements :
- 1
- Factory Lead Time :
- 10 Weeks
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- VCEsat-Max :
- 0.6 V
- Pin Count :
- 3
- Current Rating :
- -600mA
- Terminal Position :
- Dual
- Gain Bandwidth Product :
- 200MHz
- HTS Code :
- 8541.21.00.75
- Max Breakdown Voltage :
- 60V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 10
- JESD-609 Code :
- e1
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Radiation Hardening :
- No
- Datasheets
- MMST2907AT146
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMST2907AT146 Overview
DC current gain in this device equals 100 @ 150mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -1.6V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.6V @ 50mA, 500mA.Single BJT transistor is essential to maintain the continuous collector voltage at -600mA to achieve high efficiency.An emitter's base voltage can be kept at -5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -600mA current rating.As a result, the part has a transition frequency of 200MHz.Breakdown input voltage is 60V volts.In extreme cases, the collector current can be as low as 600mA volts.
MMST2907AT146 Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -600mA
a transition frequency of 200MHz
MMST2907AT146 Applications
There are a lot of ROHM Semiconductor
MMST2907AT146 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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