MMST2222AT146
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- Mfr.Part #
- MMST2222AT146
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A SMT3
- Stock
- 3,549
- In Stock ：
- 3,549
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- 40V
- Published :
- 2007
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- hFE Min :
- 35
- Transition Frequency :
- 300MHz
- Terminal Position :
- Dual
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- HTS Code :
- 8541.21.00.75
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- JESD-609 Code :
- e1
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Base Voltage (VCBO) :
- 75V
- Continuous Collector Current :
- 600mA
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Collector Emitter Voltage (VCEO) :
- 40V
- Base Part Number :
- T2222A
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 200mW
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 600mA
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 40V
- Current Rating :
- 600mA
- Collector Emitter Saturation Voltage :
- 1V
- Power Dissipation :
- 200mW
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Pins :
- 3
- Gain Bandwidth Product :
- 300MHz
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Termination :
- SMD/SMT
- Voltage :
- 40V
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- Turn Off Time-Max (toff) :
- 285ns
- Mount :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 6V
- REACH SVHC :
- No SVHC
- Max Breakdown Voltage :
- 40V
- Element Configuration :
- Single
- Current :
- 6A
- Radiation Hardening :
- No
- Collector-Base Capacitance-Max :
- 7pF
- Transistor Application :
- SWITCHING
- Datasheets
- MMST2222AT146
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMST2222AT146 Overview
DC current gain in this device equals 100 @ 150mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 50mA, 500mA.Single BJT transistor is essential to maintain the continuous collector voltage at 600mA to achieve high efficiency.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 600mA current rating.As a result, the part has a transition frequency of 300MHz.Breakdown input voltage is 40V volts.In extreme cases, the collector current can be as low as 600mA volts.
MMST2222AT146 Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz
MMST2222AT146 Applications
There are a lot of ROHM Semiconductor
MMST2222AT146 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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