MMST2907A-7-F
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- Mfr.Part #
- MMST2907A-7-F
- Manufacturer
- Diodes Incorporated
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.6A SOT323
- Stock
- 1,011
- In Stock ：
- 1,011
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 600mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Termination :
- SMD/SMT
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Max Breakdown Voltage :
- 60V
- Collector Emitter Saturation Voltage :
- -1.6V
- Gain Bandwidth Product :
- 200MHz
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- PNP
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Continuous Collector Current :
- -600mA
- Mount :
- Surface Mount
- Terminal Finish :
- Matte Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 60V
- Lead Free :
- Lead Free
- Frequency :
- 200MHz
- Number of Elements :
- 1
- Voltage - Rated DC :
- -60V
- Collector Emitter Breakdown Voltage :
- 60V
- Emitter Base Voltage (VEBO) :
- -5V
- Element Configuration :
- Single
- Published :
- 2007
- Peak Reflow Temperature (Cel) :
- 260
- Width :
- 1.35mm
- Factory Lead Time :
- 19 Weeks
- Base Part Number :
- MMST2907A
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Collector Base Voltage (VCBO) :
- 60V
- Power Dissipation :
- 200mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 2.2mm
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 200mW
- Mounting Type :
- Surface Mount
- Transition Frequency :
- 200MHz
- Operating Temperature :
- -55°C~150°C TJ
- hFE Min :
- 100
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Current Rating :
- -600mA
- Number of Pins :
- 3
- Turn On Time-Max (ton) :
- 45ns
- Number of Terminations :
- 3
- Transistor Type :
- PNP
- Package / Case :
- SC-70, SOT-323
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Height :
- 1mm
- Weight :
- 6.010099mg
- REACH SVHC :
- No SVHC
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Datasheets
- MMST2907A-7-F
MMST2907A-7-F Documents
PNP -55°C~150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
MMST2907A-7-F Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -1.6V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.6V @ 50mA, 500mA.Maintaining the continuous collector voltage at -600mA is essential for high efficiency.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-600mA).200MHz is present in the transition frequency.An input voltage of 60V volts is the breakdown voltage.Maximum collector currents can be below 600mA volts.
MMST2907A-7-F Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -600mA
a transition frequency of 200MHz
MMST2907A-7-F Applications
There are a lot of Diodes Incorporated
MMST2907A-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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