MMSTA63-7
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- Mfr.Part #
- MMSTA63-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP DARL 30V 0.5A SC70-3
- Stock
- 3,452
- In Stock ：
- 3,452
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Published :
- 2007
- Lead Free :
- Lead Free
- Transistor Type :
- PNP - Darlington
- Factory Lead Time :
- 19 Weeks
- Power - Max :
- 200mW
- Collector Emitter Voltage (VCEO) :
- 30V
- Terminal Finish :
- Matte Tin (Sn)
- Number of Terminations :
- 3
- Max Power Dissipation :
- 200mW
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Length :
- 2.2mm
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Polarity :
- PNP
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 30V
- Frequency - Transition :
- 125MHz
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 1.5V
- Pbfree Code :
- yes
- Current Rating :
- -500mA
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 500mA
- Terminal Position :
- Dual
- Weight :
- 6.010099mg
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 5000
- Voltage - Rated DC :
- -30V
- Pin Count :
- 3
- Transition Frequency :
- 125MHz
- Max Breakdown Voltage :
- 30V
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 30V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Package / Case :
- SC-70, SOT-323
- Emitter Base Voltage (VEBO) :
- 10V
- Width :
- 1.35mm
- Base Part Number :
- MMSTA63
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Height :
- 1mm
- Terminal Form :
- Gull wing
- Datasheets
- MMSTA63-7
MMSTA63-7 Documents
PNP - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON SC-70, SOT-323 Tape & Reel (TR) Surface Mount
MMSTA63-7-F Overview
In this device, the DC current gain is 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 100μA, 100mA.With the emitter base voltage set at 10V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 125MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MMSTA63-7-F Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz
MMSTA63-7-F Applications
There are a lot of Diodes Incorporated
MMSTA63-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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