MMSTA63-7
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- Mfr.Part #
- MMSTA63-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP DARL 30V 0.5A SC70-3
- Stock
- 3,452
- In Stock ：
- 3,452
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- SC-70, SOT-323
- Emitter Base Voltage (VEBO) :
- 10V
- Operating Temperature :
- -55°C~150°C TJ
- Base Part Number :
- MMSTA63
- Frequency - Transition :
- 125MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 19 Weeks
- Packaging :
- Tape and Reel (TR)
- Height :
- 1mm
- Polarity :
- PNP
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Transistor Type :
- PNP - Darlington
- Number of Pins :
- 3
- Mount :
- Surface Mount
- Voltage - Rated DC :
- -30V
- Collector Base Voltage (VCBO) :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- Published :
- 2007
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 30V
- Collector Emitter Saturation Voltage :
- 1.5V
- Current Rating :
- -500mA
- Power - Max :
- 200mW
- Terminal Form :
- Gull wing
- Width :
- 1.35mm
- Number of Terminations :
- 3
- Transition Frequency :
- 125MHz
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 30V
- hFE Min :
- 5000
- Pin Count :
- 3
- Length :
- 2.2mm
- Collector Emitter Breakdown Voltage :
- 30V
- Max Power Dissipation :
- 200mW
- Terminal Finish :
- Matte Tin (Sn)
- Weight :
- 6.010099mg
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Collector Current :
- 500mA
- Datasheets
- MMSTA63-7
PNP - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON SC-70, SOT-323 Tape & Reel (TR) Surface Mount
MMSTA63-7-F Overview
In this device, the DC current gain is 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 100μA, 100mA.With the emitter base voltage set at 10V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 125MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MMSTA63-7-F Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz
MMSTA63-7-F Applications
There are a lot of Diodes Incorporated
MMSTA63-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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