MMSTA55-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Voltage (VCEO) :

60V

Transistor Type :

PNP

Published :

2007

Peak Reflow Temperature (Cel) :

260

Pin Count :

3

Current Rating :

-500mA

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Terminal Finish :

Matte Tin (Sn)

hFE Min :

100

Collector Base Voltage (VCBO) :

60V

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation :

200mW

Factory Lead Time :

19 Weeks

ECCN Code :

EAR99

Element Configuration :

Single

Current - Collector Cutoff (Max) :

100nA ICBO

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Terminal Position :

Dual

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA 1V

Mount :

Surface Mount

Pbfree Code :

yes

Continuous Collector Current :

-500mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Width :

1.35mm

Collector Emitter Breakdown Voltage :

60V

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 100mA

Length :

2.2mm

Max Power Dissipation :

200mW

Voltage - Rated DC :

-60V

Base Part Number :

MMSTA55

Gain Bandwidth Product :

50MHz

Weight :

6.010099mg

Frequency :

50MHz

Number of Pins :

3

Collector Emitter Saturation Voltage :

-250mV

Number of Terminations :

3

Max Breakdown Voltage :

60V

Emitter Base Voltage (VEBO) :

-4V

Package / Case :

SC-70, SOT-323

Radiation Hardening :

No

Transistor Element Material :

SILICON

Max Collector Current :

500mA

Polarity/Channel Type :

PNP

Packaging :

Tape and Reel (TR)

Height :

1mm

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Transition Frequency :

50MHz