MMSTA55-7
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- Mfr.Part #
- MMSTA55-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.5A SC70-3
- Stock
- 498
- In Stock ：
- 498
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- SC-70, SOT-323
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Transition Frequency :
- 50MHz
- Continuous Collector Current :
- -500mA
- Power Dissipation :
- 200mW
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 50MHz
- Factory Lead Time :
- 19 Weeks
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 60V
- Max Collector Current :
- 500mA
- Length :
- 2.2mm
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Terminal Form :
- Gull wing
- Radiation Hardening :
- No
- Base Part Number :
- MMSTA55
- Collector Emitter Voltage (VCEO) :
- 60V
- Terminal Position :
- Dual
- Width :
- 1.35mm
- Voltage - Rated DC :
- -60V
- Emitter Base Voltage (VEBO) :
- -4V
- Published :
- 2007
- Collector Emitter Breakdown Voltage :
- 60V
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Weight :
- 6.010099mg
- Transistor Type :
- PNP
- Terminal Finish :
- Matte Tin (Sn)
- Frequency :
- 50MHz
- REACH SVHC :
- No SVHC
- Max Power Dissipation :
- 200mW
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Polarity/Channel Type :
- PNP
- Collector Emitter Saturation Voltage :
- -250mV
- hFE Min :
- 100
- Operating Temperature :
- -55°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- Max Breakdown Voltage :
- 60V
- Transistor Application :
- SWITCHING
- Current Rating :
- -500mA
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- JESD-609 Code :
- e3
- Height :
- 1mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Datasheets
- MMSTA55-7
MMSTA55-7 Documents
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
MMSTA55-7-F Overview
This device has a DC current gain of 100 @ 100mA 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -250mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of -500mA is necessary for high efficiency.The base voltage of the emitter can be kept at -4V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -500mA.In this part, there is a transition frequency of 50MHz.As a result, it can handle voltages as low as 60V volts.The maximum collector current is 500mA volts.
MMSTA55-7-F Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -4V
the current rating of this device is -500mA
a transition frequency of 50MHz
MMSTA55-7-F Applications
There are a lot of Diodes Incorporated
MMSTA55-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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