MMSTA42

Manufacturer :

YANGJIE

Product Category :

Transistors - Bipolar (BJT) - Single

Max Power Dissipation :

200mW

Max Breakdown Voltage :

300V

Base Part Number :

MMSTA42

Gain Bandwidth Product :

50MHz

Peak Reflow Temperature (Cel) :

260

Voltage - Rated DC :

300V

Published :

2007

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Mount :

Surface Mount

Mounting Type :

Surface Mount

Frequency :

50MHz

Collector Emitter Saturation Voltage :

500mV

Transition Frequency :

50MHz

Current - Collector Cutoff (Max) :

100nA ICBO

Power Dissipation :

200mW

hFE Min :

25

Operating Temperature :

-55°C~150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 30mA 10V

Transistor Type :

NPN

Packaging :

Tape and Reel (TR)

Collector Base Voltage (VCBO) :

300V

Collector Emitter Voltage (VCEO) :

300V

Pin Count :

3

Element Configuration :

Single

Pbfree Code :

yes

Terminal Position :

Dual

Collector Emitter Breakdown Voltage :

300V

Emitter Base Voltage (VEBO) :

6V

Current Rating :

200mA

ECCN Code :

EAR99

Number of Pins :

3

Polarity/Channel Type :

NPN

Length :

2.2mm

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Form :

Gull wing

Package / Case :

SC-70, SOT-323

Contact Plating :

Tin

Weight :

6.010099mg

Vce Saturation (Max) @ Ib, Ic :

500mV @ 2mA, 20mA

Continuous Collector Current :

200mA

Transistor Element Material :

SILICON

Number of Elements :

1

Height :

1mm

Transistor Application :

SWITCHING

Factory Lead Time :

19 Weeks

Max Collector Current :

200mA

Width :

1.35mm

REACH SVHC :

No SVHC

Lead Free :

Lead Free