MMSTA42
- Mfr.Part #
- MMSTA42
- Manufacturer
- YANGJIE
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- SOT-323 NPN 0.2W 0.1A 300V Trans
- Stock
- 15,000
- In Stock :
- 15,000
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- Manufacturer :
- YANGJIE
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- Frequency :
- 50MHz
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Contact Plating :
- Tin
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 200mW
- Package / Case :
- SC-70, SOT-323
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Continuous Collector Current :
- 200mA
- Number of Pins :
- 3
- Voltage - Rated DC :
- 300V
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Factory Lead Time :
- 19 Weeks
- REACH SVHC :
- No SVHC
- Collector Emitter Saturation Voltage :
- 500mV
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Power Dissipation :
- 200mW
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- Base Part Number :
- MMSTA42
- Published :
- 2007
- Gain Bandwidth Product :
- 50MHz
- Length :
- 2.2mm
- Max Breakdown Voltage :
- 300V
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 300V
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 300V
- Current Rating :
- 200mA
- Emitter Base Voltage (VEBO) :
- 6V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 30mA 10V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Transition Frequency :
- 50MHz
- hFE Min :
- 25
- Width :
- 1.35mm
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 300V
- Weight :
- 6.010099mg
- Height :
- 1mm
- Pin Count :
- 3
- Max Collector Current :
- 200mA
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- MMSTA42
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
MMSTA42-7-F Overview
In this device, the DC current gain is 40 @ 30mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 2mA, 20mA.Maintaining the continuous collector voltage at 200mA is essential for high efficiency.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (200mA).50MHz is present in the transition frequency.An input voltage of 300V volts is the breakdown voltage.Maximum collector currents can be below 200mA volts.
MMSTA42-7-F Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 50MHz
MMSTA42-7-F Applications
There are a lot of Diodes Incorporated
MMSTA42-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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