MMSTA42-7-F
- Mfr.Part #
- MMSTA42-7-F
- Manufacturer
- Diodes Incorporated
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.2A SOT323
- Stock
- 998
- In Stock :
- 998
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- hFE Min :
- 25
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 50MHz
- Polarity/Channel Type :
- NPN
- Width :
- 1.35mm
- Length :
- 2.2mm
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Published :
- 2007
- Voltage - Rated DC :
- 300V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Peak Reflow Temperature (Cel) :
- 260
- Pbfree Code :
- yes
- Package / Case :
- SC-70, SOT-323
- Max Breakdown Voltage :
- 300V
- Transition Frequency :
- 50MHz
- Factory Lead Time :
- 19 Weeks
- Emitter Base Voltage (VEBO) :
- 6V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Max Collector Current :
- 200mA
- Current Rating :
- 200mA
- Collector Base Voltage (VCBO) :
- 300V
- Max Power Dissipation :
- 200mW
- Collector Emitter Breakdown Voltage :
- 300V
- Transistor Type :
- NPN
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Weight :
- 6.010099mg
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 500mV
- Continuous Collector Current :
- 200mA
- Frequency :
- 50MHz
- Height :
- 1mm
- Power Dissipation :
- 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 30mA 10V
- ECCN Code :
- EAR99
- Base Part Number :
- MMSTA42
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Contact Plating :
- Tin
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 300V
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Datasheets
- MMSTA42-7-F

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
MMSTA42-7-F Overview
In this device, the DC current gain is 40 @ 30mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 2mA, 20mA.Maintaining the continuous collector voltage at 200mA is essential for high efficiency.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (200mA).50MHz is present in the transition frequency.An input voltage of 300V volts is the breakdown voltage.Maximum collector currents can be below 200mA volts.
MMSTA42-7-F Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 50MHz
MMSTA42-7-F Applications
There are a lot of Diodes Incorporated
MMSTA42-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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