MMSTA42-7
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- Mfr.Part #
- MMSTA42-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.2A SOT323
- Stock
- 35,496
- In Stock ：
- 35,496
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Voltage - Rated DC :
- 300V
- Collector Emitter Breakdown Voltage :
- 300V
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Pin Count :
- 3
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 6V
- Element Configuration :
- Single
- Weight :
- 6.010099mg
- Factory Lead Time :
- 19 Weeks
- Polarity/Channel Type :
- NPN
- Radiation Hardening :
- No
- Power Dissipation :
- 200mW
- Gain Bandwidth Product :
- 50MHz
- Package / Case :
- SC-70, SOT-323
- Mount :
- Surface Mount
- Transition Frequency :
- 50MHz
- Collector Base Voltage (VCBO) :
- 300V
- Length :
- 2.2mm
- Max Power Dissipation :
- 200mW
- Current Rating :
- 200mA
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 300V
- Width :
- 1.35mm
- Base Part Number :
- MMSTA42
- Terminal Position :
- Dual
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 30mA 10V
- Height :
- 1mm
- Contact Plating :
- Tin
- Time@Peak Reflow Temperature-Max (s) :
- 40
- hFE Min :
- 25
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Transistor Type :
- NPN
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Saturation Voltage :
- 500mV
- Max Breakdown Voltage :
- 300V
- Continuous Collector Current :
- 200mA
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 200mA
- Frequency :
- 50MHz
- REACH SVHC :
- No SVHC
- Published :
- 2007
- Datasheets
- MMSTA42-7
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
MMSTA42-7-F Overview
In this device, the DC current gain is 40 @ 30mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 2mA, 20mA.Maintaining the continuous collector voltage at 200mA is essential for high efficiency.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (200mA).50MHz is present in the transition frequency.An input voltage of 300V volts is the breakdown voltage.Maximum collector currents can be below 200mA volts.
MMSTA42-7-F Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 50MHz
MMSTA42-7-F Applications
There are a lot of Diodes Incorporated
MMSTA42-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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