MMSTA28T146
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- Mfr.Part #
- MMSTA28T146
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 0.3A SMT3
- Stock
- 23,634
- In Stock ：
- 23,634
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Termination :
- SMD/SMT
- Max Breakdown Voltage :
- 80V
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Max Collector Current :
- 300mA
- Collector Emitter Breakdown Voltage :
- 80V
- Base Part Number :
- STA28
- Time@Peak Reflow Temperature-Max (s) :
- 10
- HTS Code :
- 8541.21.00.75
- Terminal Position :
- Dual
- Published :
- 2005
- Transistor Application :
- AMPLIFIER
- Mounting Type :
- Surface Mount
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 12V
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- hFE Min :
- 10000
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Collector Base Voltage (VCBO) :
- 80V
- VCEsat-Max :
- 1.5 V
- Radiation Hardening :
- No
- Factory Lead Time :
- 19 Weeks
- Collector Emitter Voltage (VCEO) :
- 80V
- Transition Frequency :
- 200MHz
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 500nA
- Frequency - Transition :
- 200MHz
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Pbfree Code :
- yes
- Power Dissipation :
- 200mW
- Number of Elements :
- 1
- Max Power Dissipation :
- 200mW
- Transistor Type :
- NPN - Darlington
- Packaging :
- Tape and Reel (TR)
- Collector-Base Capacitance-Max :
- 8pF
- REACH SVHC :
- No SVHC
- Mount :
- Surface Mount
- Polarity :
- NPN
- Datasheets
- MMSTA28T146
NPN - Darlington 150°C TJ 500nA 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMSTA28T146 Overview
This device has a DC current gain of 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1.5V @ 100μA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 12V.As you can see, the part has a transition frequency of 200MHz.A breakdown input voltage of 80V volts can be used.A maximum collector current of 300mA volts is possible.
MMSTA28T146 Features
the DC current gain for this device is 10000 @ 100mA 5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 12V
a transition frequency of 200MHz
MMSTA28T146 Applications
There are a lot of ROHM Semiconductor
MMSTA28T146 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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