MMSTA06T146
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- Mfr.Part #
- MMSTA06T146
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A SMT3
- Stock
- 8,942
- In Stock ：
- 8,942
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 80V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Collector Current :
- 500mA
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Transistor Application :
- AMPLIFIER
- Pin Count :
- 3
- Termination :
- SMD/SMT
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Current Rating :
- 500mA
- Max Breakdown Voltage :
- 80V
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 250mV
- Transition Frequency :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- STA06
- Emitter Base Voltage (VEBO) :
- 4V
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 10 Weeks
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- HTS Code :
- 8541.21.00.95
- Number of Elements :
- 1
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 1μA
- Power Dissipation :
- 200mW
- Voltage - Rated DC :
- 80V
- VCEsat-Max :
- 0.25 V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- hFE Min :
- 100
- Gain Bandwidth Product :
- 100MHz
- Terminal Position :
- Dual
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- 80V
- Peak Reflow Temperature (Cel) :
- 260
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 350mW
- Published :
- 2007
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- REACH SVHC :
- No SVHC
- Datasheets
- MMSTA06T146
MMSTA06T146 Documents
NPN 150°C TJ 1μA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMSTA06T146 Overview
DC current gain in this device equals 100 @ 100mA 1V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 10mA, 100mA.An emitter's base voltage can be kept at 4V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 500mA current rating.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 80V volts.In extreme cases, the collector current can be as low as 500mA volts.
MMSTA06T146 Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MMSTA06T146 Applications
There are a lot of ROHM Semiconductor
MMSTA06T146 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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