MMST8098T146
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- Mfr.Part #
- MMST8098T146
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.2A SMT3
- Stock
- 32,754
- In Stock ：
- 32,754
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 400mV
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 60V
- Lead Free :
- Lead Free
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Emitter Base Voltage (VEBO) :
- 6V
- Transistor Type :
- NPN
- Max Collector Current :
- 200mA
- Gain Bandwidth Product :
- 350MHz
- Mount :
- Surface Mount
- Min Operating Temperature :
- -55°C
- Max Operating Temperature :
- 150°C
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1mA 5V
- Max Breakdown Voltage :
- 60V
- Continuous Collector Current :
- 200mA
- Published :
- 2005
- Collector Emitter Breakdown Voltage :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 100nA
- Base Part Number :
- MMST8098
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 350mW
- Element Configuration :
- Single
- Radiation Hardening :
- No
- hFE Min :
- 75
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 60V
- Datasheets
- MMST8098T146
NPN 100nA TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMST8098T146 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 1mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 400mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 10mA, 100mA.Single BJT transistor is recommended to keep the continuous collector voltage at 200mA in order to achieve high efficiency.The emitter base voltage can be kept at 6V for high efficiency.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.
MMST8098T146 Features
the DC current gain for this device is 100 @ 1mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 6V
MMST8098T146 Applications
There are a lot of ROHM Semiconductor
MMST8098T146 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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