MMST6428T146
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- Mfr.Part #
- MMST6428T146
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.2A SMD3
- Stock
- 3,578
- In Stock ：
- 3,578
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Transition Frequency :
- 100MHz
- Max Frequency :
- 700MHz
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Transistor Element Material :
- SILICON
- Collector-Base Capacitance-Max :
- 3pF
- hFE Min :
- 250
- Factory Lead Time :
- 9 Weeks
- RoHS Status :
- ROHS3 Compliant
- HTS Code :
- 8541.21.00.95
- Terminal Form :
- Gull wing
- Collector Emitter Breakdown Voltage :
- 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 1mA 5V
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 6V
- Gain Bandwidth Product :
- 700MHz
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Operating Temperature :
- 125°C TJ
- Max Collector Current :
- 200mA
- JESD-30 Code :
- R-PDSO-G3
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Current - Collector (Ic) (Max) :
- 200mA
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 60V
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Published :
- 2006
- Element Configuration :
- Single
- Max Power Dissipation :
- 200mW
- Collector Emitter Voltage (VCEO) :
- 50V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Terminations :
- 3
- Number of Pins :
- 59
- Datasheets
- MMST6428T146
NPN 125°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMST6428T146 Overview
In this device, the DC current gain is 250 @ 1mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.
MMST6428T146 Features
the DC current gain for this device is 250 @ 1mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
MMST6428T146 Applications
There are a lot of ROHM Semiconductor
MMST6428T146 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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