MMST5401

Manufacturer :

YANGJIE

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector Cutoff (Max) :

50nA ICBO

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Element Configuration :

Single

Published :

2007

Power Dissipation :

200mW

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Matte Tin (Sn)

Transition Frequency :

100MHz

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Max Power Dissipation :

200mW

Polarity/Channel Type :

PNP

Frequency :

300MHz

Weight :

6.010099mg

Number of Elements :

1

Height :

1.1mm

Max Collector Current :

-200mA

Transistor Type :

PNP

Collector Emitter Voltage (VCEO) :

-150V

Collector Emitter Breakdown Voltage :

-150V

Current - Collector (Ic) (Max) :

200mA

Time@Peak Reflow Temperature-Max (s) :

30

Collector Base Voltage (VCBO) :

-160V

Radiation Hardening :

No

Max Breakdown Voltage :

150V

Package / Case :

SC-70, SOT-323

Mounting Type :

Surface Mount

Mount :

Surface Mount

Current Rating :

-200mA

Base Part Number :

MMST5401

hFE Min :

60

Number of Terminations :

3

Terminal Form :

Gull wing

REACH SVHC :

No SVHC

Factory Lead Time :

19 Weeks

Width :

1.35mm

Emitter Base Voltage (VEBO) :

-5V

Transistor Element Material :

SILICON

Number of Pins :

3

Gain Bandwidth Product :

100MHz

Peak Reflow Temperature (Cel) :

260

Pin Count :

3

Length :

2.2mm

Vce Saturation (Max) @ Ib, Ic :

500mV @ 5mA, 50mA

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 10mA 5V

ECCN Code :

EAR99

Voltage - Rated DC :

-150V

Collector Emitter Saturation Voltage :

-500mV

Max Junction Temperature (Tj) :

150°C

JESD-609 Code :

e3