MMST4401T146
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- Mfr.Part #
- MMST4401T146
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A SMT3
- Stock
- 12,924
- In Stock ：
- 12,924
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Continuous Collector Current :
- 600mA
- Polarity/Channel Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- 600mA
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 60V
- Transition Frequency :
- 250MHz
- Voltage - Rated DC :
- 40V
- Number of Pins :
- 3
- Power - Max :
- 200mW
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 1V
- Collector Emitter Voltage (VCEO) :
- 40V
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- 260
- Turn Off Time-Max (toff) :
- 255ns
- Collector Emitter Saturation Voltage :
- 1.2V
- Published :
- 2007
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 40V
- Terminal Form :
- Gull wing
- Collector-Base Capacitance-Max :
- 7pF
- JESD-609 Code :
- e1
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- T4401
- Pin Count :
- 3
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 6V
- hFE Min :
- 20
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Breakdown Voltage :
- 40V
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Max Power Dissipation :
- 350mW
- Max Collector Current :
- 600mA
- Gain Bandwidth Product :
- 250MHz
- HTS Code :
- 8541.21.00.75
- Number of Terminations :
- 3
- Datasheets
- MMST4401T146
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMST4401T146 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 1V DC current gain.As it features a collector emitter saturation voltage of 1.2V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 600mA.Keeping the emitter base voltage at 6V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 250MHz in the part.Single BJT transistor can be broken down at a voltage of 40V volts.When collector current reaches its maximum, it can reach 600mA volts.
MMST4401T146 Features
the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 250MHz
MMST4401T146 Applications
There are a lot of ROHM Semiconductor
MMST4401T146 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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