MMST4401-7-F
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- Mfr.Part #
- MMST4401-7-F
- Manufacturer
- Diodes Incorporated
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A SOT323
- Stock
- 160
- In Stock ：
- 160
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Width :
- 1.35mm
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Voltage - Rated DC :
- 40V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 1V
- Transistor Type :
- NPN
- REACH SVHC :
- No SVHC
- Mounting Type :
- Surface Mount
- hFE Min :
- 20
- Emitter Base Voltage (VEBO) :
- 6V
- Pin Count :
- 3
- Number of Pins :
- 3
- Factory Lead Time :
- 19 Weeks
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Max Breakdown Voltage :
- 40V
- Length :
- 2.2mm
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- 60V
- Frequency :
- 250MHz
- Turn Off Time-Max (toff) :
- 255ns
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Height :
- 1mm
- Base Part Number :
- MMST4401
- Transition Frequency :
- 250MHz
- Current Rating :
- 600mA
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 200mW
- Mount :
- Surface Mount
- Terminal Finish :
- Matte Tin (Sn)
- Collector Emitter Breakdown Voltage :
- 40V
- Gain Bandwidth Product :
- 250MHz
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Max Collector Current :
- 600mA
- Terminal Form :
- Gull wing
- Package / Case :
- SC-70, SOT-323
- Published :
- 2007
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 40V
- Weight :
- 6.010099mg
- Power Dissipation :
- 200mW
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- MMST4401-7-F
NPN -55°C~150°C TJ 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
MMST4401-7-F Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 750mV @ 50mA, 500mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 600mA.A transition frequency of 250MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Collector current can be as low as 600mA volts at its maximum.
MMST4401-7-F Features
the DC current gain for this device is 100 @ 150mA 1V
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 250MHz
MMST4401-7-F Applications
There are a lot of Diodes Incorporated
MMST4401-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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