MMST3904T146
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- Mfr.Part #
- MMST3904T146
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.2A SMT3
- Stock
- 13,083
- In Stock ：
- 13,083
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Current Rating :
- 20mA
- Collector-Base Capacitance-Max :
- 4pF
- Turn On Time-Max (ton) :
- 70ns
- Collector Emitter Voltage (VCEO) :
- 40V
- Collector Emitter Breakdown Voltage :
- 40V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Mounting Type :
- Surface Mount
- Voltage - Rated DC :
- 40V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Emitter Base Voltage (VEBO) :
- 6V
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 50nA
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 300MHz
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Polarity/Channel Type :
- NPN
- Collector Emitter Saturation Voltage :
- 300mV
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- Collector Base Voltage (VCBO) :
- 60V
- Turn Off Time-Max (toff) :
- 250ns
- Max Breakdown Voltage :
- 40V
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- Base Part Number :
- T3904
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Gain Bandwidth Product :
- 300MHz
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- JESD-609 Code :
- e1
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Published :
- 2007
- Max Power Dissipation :
- 200mW
- HTS Code :
- 8541.21.00.75
- hFE Min :
- 40
- Operating Temperature :
- 150°C TJ
- Max Collector Current :
- 200mA
- Continuous Collector Current :
- 200mA
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Datasheets
- MMST3904T146
NPN 150°C TJ 50nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMST3904T146 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 10mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 300mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 5mA, 50mA.Continuous collector voltages of 200mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 20mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 300MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 200mA volts.
MMST3904T146 Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 20mA
a transition frequency of 300MHz
MMST3904T146 Applications
There are a lot of ROHM Semiconductor
MMST3904T146 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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