MMJT9435T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Time@Peak Reflow Temperature-Max (s) :

40

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Published :

2007

Collector Emitter Saturation Voltage :

155mV

Max Collector Current :

3A

Number of Elements :

1

Max Breakdown Voltage :

30V

Qualification Status :

Not Qualified

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Pbfree Code :

yes

Case Connection :

COLLECTOR

Emitter Base Voltage (VEBO) :

6V

Collector Emitter Voltage (VCEO) :

30V

Frequency :

110MHz

Pin Count :

4

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

30V

Transition Frequency :

110MHz

Current Rating :

-3A

Package / Case :

TO-261-4, TO-261AA

Gain Bandwidth Product :

110MHz

Number of Pins :

4

Element Configuration :

Single

Collector Base Voltage (VCBO) :

45V

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 3 days ago)

Vce Saturation (Max) @ Ib, Ic :

550mV @ 300mA, 3A

RoHS Status :

RoHS Compliant

Max Power Dissipation :

3W

Operating Temperature :

-55°C~150°C TJ

Polarity/Channel Type :

PNP

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Power - Max :

3W

Base Part Number :

MMJT9435

Mount :

Surface Mount

Power Dissipation :

1.56W

Number of Terminations :

4

Transistor Type :

PNP

JESD-609 Code :

e3

hFE Min :

125

Voltage - Rated DC :

-30V

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

125 @ 800mA 1V