MMJT9435T1

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Mfr.Part #
MMJT9435T1
Manufacturer
onsemi
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS PNP 30V 3A SOT223
Stock
17,656
In Stock :
17,656

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Type :
PNP
Power - Max :
3W
Packaging :
Tape and Reel (TR)
Collector Base Voltage (VCBO) :
45V
Max Breakdown Voltage :
30V
JESD-609 Code :
e3
Voltage - Rated DC :
-30V
RoHS Status :
RoHS Compliant
Gain Bandwidth Product :
110MHz
Polarity/Channel Type :
PNP
hFE Min :
125
Current Rating :
-3A
Max Collector Current :
3A
Collector Emitter Voltage (VCEO) :
30V
Terminal Form :
Gull wing
DC Current Gain (hFE) (Min) @ Ic, Vce :
125 @ 800mA 1V
Time@Peak Reflow Temperature-Max (s) :
40
Mounting Type :
Surface Mount
Published :
2007
Frequency :
110MHz
Vce Saturation (Max) @ Ib, Ic :
550mV @ 300mA, 3A
Base Part Number :
MMJT9435
Pin Count :
4
Mount :
Surface Mount
Transition Frequency :
110MHz
Operating Temperature :
-55°C~150°C TJ
Package / Case :
TO-261-4, TO-261AA
Number of Pins :
4
Power Dissipation :
1.56W
Terminal Position :
Dual
Pbfree Code :
yes
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 3 days ago)
Number of Terminations :
4
Peak Reflow Temperature (Cel) :
260
Collector Emitter Saturation Voltage :
155mV
ECCN Code :
EAR99
Lead Free :
Lead Free
Max Power Dissipation :
3W
Qualification Status :
Not Qualified
Transistor Element Material :
SILICON
Collector Emitter Breakdown Voltage :
30V
Case Connection :
COLLECTOR
Terminal Finish :
Tin (Sn)
Element Configuration :
Single
Number of Elements :
1
Emitter Base Voltage (VEBO) :
6V
Datasheets
MMJT9435T1
Introducing Transistors - Bipolar (BJT) - Single onsemi MMJT9435T1 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Base Part Number:MMJT9435, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-261-4, TO-261AA, Number of Pins:4, Number of Terminations:4, MMJT9435T1 pinout, MMJT9435T1 datasheet PDF, MMJT9435T1 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MMJT9435T1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MMJT9435T1


PNP -55°C~150°C TJ 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

MMJT9435T1G Overview


This device has a DC current gain of 125 @ 800mA 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 155mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -3A.In this part, there is a transition frequency of 110MHz.As a result, it can handle voltages as low as 30V volts.The maximum collector current is 3A volts.

MMJT9435T1G Features


the DC current gain for this device is 125 @ 800mA 1V
a collector emitter saturation voltage of 155mV
the vce saturation(Max) is 550mV @ 300mA, 3A
the emitter base voltage is kept at 6V
the current rating of this device is -3A
a transition frequency of 110MHz


MMJT9435T1G Applications


There are a lot of ON Semiconductor
MMJT9435T1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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