MMJT9410T1
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- Mfr.Part #
- MMJT9410T1
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 30V 3A SOT223
- Stock
- 6,250
- In Stock ：
- 6,250
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e0
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 450mV @ 300mA, 3A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- Case Connection :
- COLLECTOR
- Element Configuration :
- Single
- Qualification Status :
- Not Qualified
- Polarity/Channel Type :
- NPN
- JESD-30 Code :
- R-PDSO-G3
- Collector Emitter Saturation Voltage :
- 150mV
- Reach Compliance Code :
- not_compliant
- Mount :
- Surface Mount
- Pin Count :
- 4
- Max Collector Current :
- 3A
- Number of Terminations :
- 3
- Base Part Number :
- MMJT9410
- Terminal Position :
- Dual
- Transition Frequency :
- 72MHz
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Base Voltage (VCBO) :
- 45V
- hFE Min :
- 85
- Collector Emitter Breakdown Voltage :
- 30V
- Lead Free :
- Contains Lead
- Gain Bandwidth Product :
- 72MHz
- Published :
- 2006
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 30V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 450mV
- Max Power Dissipation :
- 3W
- Emitter Base Voltage (VEBO) :
- 6V
- Voltage - Rated DC :
- 30V
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Pbfree Code :
- No
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 800mA 1V
- Package / Case :
- TO-261-4, TO-261AA
- Number of Pins :
- 4
- Current Rating :
- 3A
- RoHS Status :
- Non-RoHS Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- MMJT9410T1
NPN -55°C~150°C TJ 1 Elements 3 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
MMJT9410T1 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 85 @ 800mA 1V.With a collector emitter saturation voltage of 150mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 450mV @ 300mA, 3A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 3A.A transition frequency of 72MHz is present in the part.There is a breakdown input voltage of 30V volts that it can take.Collector current can be as low as 3A volts at its maximum.
MMJT9410T1 Features
the DC current gain for this device is 85 @ 800mA 1V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 450mV @ 300mA, 3A
the emitter base voltage is kept at 6V
the current rating of this device is 3A
a transition frequency of 72MHz
MMJT9410T1 Applications
There are a lot of ON Semiconductor
MMJT9410T1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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